Silicon (Si) is grown by Czochralski pulling techniques (CZ) and contains some oxygen that causes an absorption band at 9 microns. To avoid this, material can be prepared by a Float-Zone (FZ) process. Optical silicon is generally lightly doped (5 to 40 ohm cm) for best transmission above 10 microns, and doping is usually boron (P-type) and phosphorus (N-type). After doping silicon has a further pass band: 30 to 100 microns which is effective only in very high resistivity uncompensated material.